FDC6432SH

FET, MOSFET Arrays Overview

The FDC6432SH is a complementary P-Channel MOSFET with SyncFET technology designed to improve DC/DC converter efficiency. It integrates an N-channel and a P-channel MOSFET in a SuperSOT-6 package. The N-channel device offers RDS(ON) of 90 mΩ at VGS = 10V, while the P-channel provides 90 mΩ at VGS = -4.5V. Key electrical parameters include a drain-source voltage rating of 30V for the N-channel and -12V for the P-channel. Continuous drain currents are specified as 2.4A and -2.5A respectively. The component operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrated complementary N-channel and P-channel MOSFETs optimized for synchronous switching applications
• High-performance trench technology engineered for extremely low on-resistance across various gate voltages
• Fast switching speed characteristics suitable for high-frequency power management circuits

FET, MOSFET Arrays Applications

• DC/DC converters
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and reel specifications. Ensure compatibility with standard surface mount assembly processes. Confirm that the selected variant meets all thermal and electrical requirements for the intended operating environment before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when designing synchronous rectification stages requiring compact footprint solutions. Evaluate the gate drive voltage levels to ensure optimal RDS(ON) performance for both N-channel and P-channel devices. Consider the thermal resistance characteristics relative to the PCB copper area available for heat dissipation during continuous operation.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family from onsemi (formerly Fairchild Semiconductor). It utilizes advanced trench MOSFET architecture to minimize conduction losses. The SuperSOT-6 packaging allows for high-density board layouts compared to discrete dual-MOSFET configurations, making it suitable for space-constrained portable electronics and industrial power supplies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Verify pinout compatibility and electrical parameter margins if considering alternative manufacturers' complementary MOSFET pairs.