FDC6506P-NB4S006A

FET, MOSFET Arrays Overview

The FDC6506P-NB4S006A is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It utilizes the PowerTrench technology and is housed in an SSOT-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 1.8 A. Key electrical characteristics include a maximum on-resistance of 170 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage of 3 V. The component supports a power dissipation of 960 mW, operates within a temperature range of -55°C to +150°C, and exhibits rise and fall times of 8 ns with a gate charge of 3.5 nC.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration for efficient high-side switching applications
• PowerTrench technology optimized for low on-resistance and fast switching speeds
• SSOT-6 compact surface-mount package suitable for space-constrained designs

FET, MOSFET Arrays Applications

• Battery protection circuits
• Load switches in portable devices
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check for obsolescence notices as availability may be limited. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to assembly.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching with moderate current capabilities. Verify that the 30 V breakdown voltage and 1.8 A current rating align with system requirements. Consider the SSOT-6 package size for PCB layout constraints. Evaluate thermal performance based on the 960 mW power dissipation limit under expected operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench MOSFET family, designed for general-purpose switching applications. The FDC6506P variant specifically offers dual channel integration in a small outline package. It serves as a discrete solution for power control tasks where efficiency and footprint are critical design factors.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the SSOT-6 package, 30 V rating, and dual P-channel configuration. Verify pin compatibility and electrical parameters before implementation.