FET, MOSFET Arrays FDC6561AN-NB5S007A product image

FDC6561AN-NB5S007A

$0.35
  • Description:MOSFET 2N-CH 30V 2.5A SSOT6
  • Series:-

SKU:f7e887243df2 Category: Brand:

  
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FDC6561AN-NB5S007A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 2.5A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDC6561AN-NB5S007A

  • Description:MOSFET 2N-CH 30V 2.5A SSOT6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
  • Rds On (Max) @ Id, Vgs:95mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
  • Power - Max:700mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDC6561AN-NB5S007A

FDC6561AN-NB5S007A

FET, MOSFET Arrays Overview

The FDC6561AN-NB5S007A is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It utilizes advanced trench technology to achieve low specific on-resistance and fast switching speeds, making it suitable for high-frequency power conversion applications. The device is housed in an SOT-363 surface-mount package, designed for efficient thermal performance and compact board space utilization. This component serves as a key element in synchronous rectification and load switch circuits within portable electronics and consumer devices.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for space-efficient circuit design
  • Low on-resistance characteristics enabled by trench technology
  • Fast switching capabilities for improved efficiency
  • Compact SOT-363 surface-mount packaging

FET, MOSFET Arrays Applications

  • Portable electronics power management
  • Consumer device load switching
  • Synchronous rectification in DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering part number against official onsemi documentation to ensure compatibility with the NB5S007A suffix specifications. Confirm that the procurement channel provides genuine components with traceable manufacturing origins. Request updated datasheets to validate current production status and compliance certifications before finalizing supply agreements.

FET, MOSFET Arrays Selection Notes

Select this component based on its dual-channel architecture which reduces footprint compared to discrete single transistors. Evaluate the on-resistance values relative to the target current requirements to minimize conduction losses. Ensure the SOT-363 package dimensions align with the PCB layout constraints and thermal management strategy of the end application.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of small-signal MOSFETs designed for general-purpose switching applications. It complements other trench-based technologies offering optimized performance-to-area ratios. The product line supports various consumer and industrial markets requiring reliable, compact power switching solutions with consistent electrical characteristics across operating temperatures.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains identical pinout configurations and voltage ratings. Verify that alternative components meet the same thermal and electrical performance standards required by the original design specifications.

FDC6561AN-NB5S007AFDC6561AN-NB5S007A
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