FDD8424H_F085

FET, MOSFET Arrays Overview

The FDD8424H_F085 is a dual N-channel and P-channel PowerTrench MOSFET from onsemi, housed in a TO-252-5 (DPAK) surface-mount package. It features a maximum drain-source voltage of 40 V and continuous drain currents of 9 A for the N-channel and 6.5 A for the P-channel. The device exhibits low on-resistance values of 24 mΩ and 54 mΩ, respectively, with gate-source voltages rated at ±20 V. Operating within a temperature range of -55 °C to +150 °C, it dissipates up to 3.1 W of power. Key electrical parameters include threshold voltages of 1 V to 3 V, gate charges of 20 nC and 24 nC, and fall times of 6 ns and 3 ns.

FET, MOSFET Arrays Feature Summary

• Combines complementary N-channel and P-channel transistors in a single compact package for space-constrained designs.
• Utilizes shielded gate technology to achieve optimized figure-of-merit performance compared to previous generations.
• Features soft body diode characteristics to minimize voltage spikes during synchronous rectification switching.

FET, MOSFET Arrays Applications

• Synchronous rectification in AC/DC power supplies
• Low-voltage DC/DC converter circuits
• General-purpose power switching applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance and specific ordering suffixes against official datasheets before integration. Validate thermal management requirements given the TO-252-5 package constraints and specified power dissipation limits.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring integrated dual-polarity switching with low conduction losses. Ensure gate drive voltages remain within the ±20 V limit. Consider the specific current ratings for each channel when designing load paths. Verify that the operating temperature range aligns with the system's environmental conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s PowerTrench family, designed for mid-voltage power switching. It represents an evolution in trench MOSFET technology, focusing on reducing gate charge and on-resistance simultaneously. The dual configuration simplifies bill of materials for half-bridge or synchronous rectifier topologies.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Check manufacturer announcements for direct replacements or evaluate alternative dual MOSFET packages with matching 40V ratings and similar Rds(on) specifications.