Single FETs, MOSFETs FDD8880 product image

FDD8880

$0.85
  • Description:MOSFET N-CH 30V 58A DPAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:ab3e20c8dc0b Category: Brand:

  
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FDD8880 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 30V 58A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FDD8880

  • Description:MOSFET N-CH 30V 58A DPAK
  • Series:*
  • Mfr:UMW
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for FDD8880

FDD8880

Single FETs, MOSFETs Overview

The UMW FDD8880 is a 30V N-Channel MOSFET designed for DC/DC converters. It features high-performance trench technology for low RDS(ON) and fast switching speed. Key electrical parameters include a Drain-to-Source Voltage (VDSS) of 30V, Gate-to-Source Voltage (VGS) of ±20V, and Continuous Drain Current (ID) up to 58A at TC=25°C. On-resistance is <9mΩ at VGS=10V and <12mΩ at VGS=4.5V. Total gate charge is 31nC at 10V. The device operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • High performance trench technology for extremely low RDS(ON)
  • Optimized for low gate charge
  • High power and current handling capability

Single FETs, MOSFETs Applications

  • DC/DC converters using synchronous switching PWM controllers
  • DC/DC converters using conventional switching PWM controllers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and delivery mode. Confirm that the component meets all required thermal and electrical specifications for the intended application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its 30V rating and low on-resistance characteristics suitable for efficient power conversion. Consider the TO-252 package dimensions and thermal resistance values when designing the PCB layout to ensure adequate heat dissipation and reliable operation under continuous load conditions.

Single FETs, MOSFETs Part Context

The FDD8880 belongs to the UMW N-Channel MOSFET family, specifically engineered for power management applications. It utilizes advanced trench technology to achieve superior conductivity and switching performance compared to standard planar devices, making it suitable for modern high-efficiency power supply designs.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative 30V N-Channel MOSFETs with similar RDS(ON) and package compatibility. Verify pinout alignment and thermal characteristics to ensure direct substitution without circuit redesign.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 58A at a case temperature of 25°C with VGS=10V.

What is the total gate charge value?

The total gate charge is 31nC when tested at VGS=10V, VDD=15V, and ID=35A.

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