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FDD8880 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 30V 58A DPAK. Review the specifications below when checking this part for your BOM.
The UMW FDD8880 is a 30V N-Channel MOSFET designed for DC/DC converters. It features high-performance trench technology for low RDS(ON) and fast switching speed. Key electrical parameters include a Drain-to-Source Voltage (VDSS) of 30V, Gate-to-Source Voltage (VGS) of ±20V, and Continuous Drain Current (ID) up to 58A at TC=25°C. On-resistance is <9mΩ at VGS=10V and <12mΩ at VGS=4.5V. Total gate charge is 31nC at 10V. The device operates within a junction temperature range of -55°C to 175°C.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and delivery mode. Confirm that the component meets all required thermal and electrical specifications for the intended application environment before finalizing procurement decisions.
Select this component based on its 30V rating and low on-resistance characteristics suitable for efficient power conversion. Consider the TO-252 package dimensions and thermal resistance values when designing the PCB layout to ensure adequate heat dissipation and reliable operation under continuous load conditions.
The FDD8880 belongs to the UMW N-Channel MOSFET family, specifically engineered for power management applications. It utilizes advanced trench technology to achieve superior conductivity and switching performance compared to standard planar devices, making it suitable for modern high-efficiency power supply designs.
Check datasheets for alternative 30V N-Channel MOSFETs with similar RDS(ON) and package compatibility. Verify pinout alignment and thermal characteristics to ensure direct substitution without circuit redesign.
The maximum continuous drain current is 58A at a case temperature of 25°C with VGS=10V.
The total gate charge is 31nC when tested at VGS=10V, VDD=15V, and ID=35A.
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