FDG6301N-F085P

Description：MOSFET 2N-CH 25V 0.22A SC70-6
Series：-

SKU:f59fa7642689 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDG6301N-F085P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 0.22A SC70-6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6301N-F085P

Description：MOSFET 2N-CH 25V 0.22A SC70-6
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：25V
Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
Rds On (Max) @ Id, Vgs：4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：9.5pF @ 10V
Power - Max：300mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDG6301N-F085P

FDG6301N-F085P

FET, MOSFET Arrays Overview

The FDG6301N-F085P is a dual N-channel power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SC-70-6 surface-mount package. The device features a drain-source breakdown voltage of 25 V and supports a continuous drain current of 220 mA. Its maximum gate-source voltage rating spans from -8 V to +8 V, with a typical gate-source threshold voltage of 650 mV. The component exhibits a drain-source on-resistance of 4 ohms and a total gate charge of 400 pC. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation capacity of 300 mW.

FET, MOSFET Arrays Feature Summary

Dual channel configuration for integrated switching applications
Enhancement mode operation with low threshold voltage
Surface-mount design suitable for compact PCB layouts

FET, MOSFET Arrays Applications

Battery protection circuits
Small signal switching loads
Portable electronic device power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix F085P against official datasheets to confirm packaging details. Confirm RoHS compliance status through manufacturer documentation before integration. Check availability as the product lifecycle status may indicate end-of-life conditions. Ensure the SC-70-6 footprint matches the target board design requirements.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual N-channel control in minimal space. Evaluate the 4 ohm on-resistance against load current needs to manage thermal performance. Consider the 220 mA current limit for appropriate circuit sizing. Verify that the 25 V voltage rating exceeds the maximum operating voltage of the target system.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's discrete MOSFET portfolio, specifically designed for low-power consumer electronics. The FDG6301N variant represents a dual-channel solution within the company's small-signal transistor lineup. It serves as a compact alternative to single-channel devices where space efficiency is critical.