FDG6302P

FET, MOSFET Arrays Overview

The FDG6302P is a dual P-channel digital FET manufactured by onsemi, housed in an SC70-6 (SOT-363) surface-mount package. It features a drain-source voltage rating of -25 V and a continuous drain current of -0.14 A. The device exhibits a static drain-source on-resistance of 10 Ω at VGS = -4.5 V and 13 Ω at VGS = -2.7 V. Gate threshold voltage ranges from -0.65 V to -1.5 V, enabling direct operation in 3 V circuits. Maximum power dissipation is 0.3 W with a junction-to-ambient thermal resistance of 415 °C/W. Operating temperature spans -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration with symmetrical pinouts for flexible circuit integration
• Logic level enhancement mode design allowing direct drive from low voltage logic sources
• High electrostatic discharge protection rated at 6.0 kV via Human Body Model standard

FET, MOSFET Arrays Applications

• Replacement for bipolar digital transistors in low voltage switching applications
• Small signal MOSFET replacement in portable electronic devices
• Direct interface with 3 V logic control circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific revision matches the required datasheet specifications. Ensure the SC70-6 package dimensions align with the target PCB footprint constraints during the procurement phase.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual P-channel solution is required for low current switching tasks. The low gate threshold voltage makes it suitable for battery-powered systems operating at 3 V. Evaluate the thermal resistance requirements against the available copper area on the printed circuit board to ensure adequate heat dissipation under continuous load conditions.

FET, MOSFET Arrays Part Context

This device belongs to the category of digital FETs designed to replace traditional bipolar junction transistors. It utilizes high cell density DMOS technology to minimize on-state resistance within a small form factor. The product line targets applications demanding efficient space utilization and low voltage compatibility in consumer electronics.

FET, MOSFET Arrays Replacement Considerations

FDG6302P

FET, MOSFET Arrays FAQ

Are the pins interchangeable in the SC70-6 package?

Yes, the pinout is symmetrical; Pin 1 and Pin 4 are interchangeable without affecting device functionality.

What is the maximum electrostatic discharge rating?

The device has an ESD rating of 6.0 kV according to the MIL-STD-883D Human Body Model standard.

How does the on-resistance vary with temperature?

At VGS = -4.5 V and ID = -0.14 A, the RDS(ON) increases from a typical 10 Ω at 25°C to 17 Ω at 125°C.