FDG6303N_D87Z

FET, MOSFET Arrays Overview

The FDG6303N_D87Z is a dual N-channel logic level enhancement mode field effect transistor manufactured by onsemi. It utilizes high cell density DMOS technology to minimize on-state resistance, designed as a replacement for bipolar digital transistors and small signal MOSFETs in low voltage applications. The device features a compact SC70-6 surface mount package with symmetrical pinouts where pins 1 and 4 are interchangeable. Key electrical characteristics include a drain-source voltage of 25 V, continuous drain current of 0.5 A, and peak current of 1.5 A. On-resistance is specified at 0.45 Ω at VGS=4.5 V and 0.60 Ω at VGS=2.7 V. Gate threshold voltage ranges from 0.65 V to 1.5 V, enabling direct operation in 3 V circuits.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with symmetrical pinout design allowing flexible orientation within the carrier.
• Integrated gate-source Zener diode providing electrostatic discharge ruggedness exceeding 6 kV under Human Body Model testing.
• Logic level enhancement mode architecture optimized for very low level gate drive requirements.
• High cell density DMOS process tailored to minimize on-state resistance for efficient power management.

FET, MOSFET Arrays Applications

• Low voltage logic switching circuits
• Replacement for bipolar digital transistors
• Small signal MOSFET applications

FET, MOSFET Arrays Procurement Notes

Verify part nomenclature updates due to Fairchild Semiconductor integration into ON Semiconductor. Underscores in original Fairchild orderable part numbers may be replaced with dashes in ON Semiconductor systems. Confirm updated device numbers via official channels before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in minimal space. Ensure gate drive voltages align with the specified threshold range for optimal performance. Consider thermal constraints given the junction-to-ambient resistance value when designing PCB layouts.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual N-channel digital FETs produced using proprietary high cell density DMOS technology. It serves as a compact alternative to discrete bipolar solutions, offering improved switching speeds and lower conduction losses in portable and battery-powered electronics.

FET, MOSFET Arrays Replacement Considerations

Check for equivalent dual N-channel MOSFETs in SC70-6 packages with similar VDS and RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before substitution.

FET, MOSFET Arrays FAQ

Are the pins interchangeable in the SC70-6 package?

Yes, the pinouts are symmetrical; specifically, pin 1 and pin 4 are interchangeable without affecting device functionality.

What is the ESD protection rating of the FDG6303N?

The device includes a gate-source Zener for ESD ruggedness, rated at greater than 6 kV under the Human Body Model (100 pF / 1500 Ω).

Can this device operate directly in 3 V circuits?

Yes, the very low level gate drive requirements allow direct operation in 3 V circuits due to a gate threshold voltage less than 1.5 V.