FDG6304P-F169

FET, MOSFET Arrays Overview

The FDG6304P is a dual P-Channel logic level enhancement mode field effect transistor manufactured by ON Semiconductor. It utilizes high cell density DMOS technology to minimize on-state resistance, making it suitable for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. The device features a compact SC70-6 surface mount package with symmetrical pinouts where pins 1 and 4 are interchangeable. Key electrical parameters include a drain-source breakdown voltage of -25 V, continuous drain current of -0.41 A, and pulsed drain current of -1.5 A. Static drain-source on-resistance is specified at 1.1 Ω @ VGS = -4.5 V and 1.5 Ω @ VGS = -2.7 V.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel configuration in a compact industry standard SC70-6 surface mount package
• Very low level gate drive requirements allowing direct operation in 3 V circuits
• High electrostatic discharge rating of 6 kV Human Body Model
• Designed specifically for low voltage applications

FET, MOSFET Arrays Applications

• Replacement for bipolar digital transistors
• Replacement for small signal MOSFETs
• Low voltage circuit switching

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision (Rev.5) against your design requirements. Confirm that the SC70-6 package orientation does not impact functionality due to symmetrical pinouts. Ensure thermal management accounts for the junction-to-ambient resistance of 415 °C/W on minimum pad mounting. Validate all operating parameters for your specific application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-Channel solution is required in a minimal footprint. Consider the -25 V drain-source voltage limit and -0.41 A continuous current capability. Evaluate the on-resistance values at your specific gate drive voltages (-4.5 V or -2.7 V). Verify compatibility with 3 V logic levels if direct interface is intended.

FET, MOSFET Arrays Part Context

The FDG6304P belongs to ON Semiconductor's family of dual digital FETs designed for space-constrained designs. It serves as an integrated alternative to discrete transistor pairs, simplifying PCB layout. The device is part of the broader portfolio of logic level enhancement mode field effect transistors optimized for low voltage performance.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.