FDG6313N

FET, MOSFET Arrays Overview

The FDG6313N is a dual N-channel digital FET in an SC70-6 package. It features a Drain-Source Voltage (VDSS) of 25 V and continuous Drain Current (ID) of 0.5 A. The static Drain-Source On-Resistance (RDS(ON)) is 0.45 Ω at VGS=4.5 V and 0.60 Ω at VGS=2.7 V. Gate Threshold Voltage (VGS(th)) ranges from 0.65 V to 1.5 V. Maximum Power Dissipation (PD) is 0.3 W, with a Junction-to-Ambient Thermal Resistance (RθJA) of 415 °C/W. Operating temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Symmetrical pinout design where pins 1 and 4 are interchangeable for flexible board layout.
• Logic level enhancement mode operation allowing direct drive from low voltage logic circuits.
• High cell density DMOS technology engineered to minimize on-state resistance.

FET, MOSFET Arrays Applications

• Replacement for bipolar digital transistors in low voltage switching applications.
• Small signal MOSFET replacement requiring compact surface mount packaging.
• Low voltage circuit designs operating directly in 3 V environments.

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or onsemi, noting that onsemi acquired Fairchild's semiconductor business. Confirm the component status is active or full production rather than obsolete. Ensure the datasheet revision matches the required specifications before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Verify that the 0.5 A continuous current rating meets the load requirements. Check that the 25 V breakdown voltage provides sufficient margin for the application's supply voltage.

FET, MOSFET Arrays Part Context

This device belongs to the SuperSOT-6 family of dual MOSFETs. It utilizes proprietary high cell density DMOS technology developed by Fairchild Semiconductor. The component is designed specifically for space-constrained portable electronics and low voltage logic interfacing.

FET, MOSFET Arrays Replacement Considerations

Check for equivalents within the FDG series such as FDG6312N or FDG6322C if pinout compatibility differs. Verify RDS(ON) and VDSS ratings against the original design requirements when sourcing substitutes.

FET, MOSFET Arrays FAQ

Are the pins symmetrical in the SC70-6 package?

Yes, the pinouts are symmetrical; pin 1 and pin 4 are interchangeable without affecting functionality.

What is the maximum power dissipation?

The maximum power dissipation is 0.3 W at 25°C ambient temperature.

Can this device operate directly in 3 V circuits?

Yes, the very low level gate drive requirements allow direct operation in 3 V circuits.