FDG6317NZ

FET, MOSFET Arrays Overview

The FDG6317NZ is a dual N-Channel MOSFET array designed for DC/DC converter applications. It features a maximum drain-source voltage of 20 V and continuous drain current of 700 mA per channel. The device utilizes high-performance Trench technology to achieve an extremely low on-resistance (RDS(on)) of 0.3 ohms. It operates within a gate-source voltage range of ±20 V and dissipates up to 300 mW of power. The component is housed in a surface-mount SC-88 (SC-70-6) package, offering low gate charge and integrated gate-source Zener protection for ESD ruggedness rated at 1.6 kV human body model.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration optimized for synchronous or conventional DC/DC converters
• High-performance Trench technology enabling extremely low RDS(on)
• Integrated gate-source Zener diode providing ESD ruggedness

FET, MOSFET Arrays Applications

• Low-power DC/DC conversion circuits
• Synchronous rectification in buck regulators
• General switching applications requiring compact form factor

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'NZ' against the manufacturer's latest documentation to confirm pinout compatibility and RoHS status. Note that some distributor sources indicate this part may be scheduled for obsolescence; confirm availability and lifecycle status directly with authorized suppliers before finalizing design-in decisions.

FET, MOSFET Arrays Selection Notes

Select this component when designing low-voltage, low-current power stages where space constraints necessitate a small SC-70-6 footprint. Ensure the application current remains below 700 mA and voltage does not exceed 20 V. Consider thermal dissipation limits of 300 mW in enclosed environments.

FET, MOSFET Arrays Part Context

This device belongs to onsemi’s portfolio of discrete MOSFET arrays intended for portable electronics and power management ICs. It complements other low-voltage solutions by providing dual-channel functionality in a minimal surface-mount package, supporting efficiency improvements in modern mobile and embedded power systems.

FET, MOSFET Arrays Replacement Considerations

The FDG6332C is identified as a comparable industry-standard transistor from onsemi. Verify electrical parameters and pin compatibility before substitution.