FDG6321C

FET, MOSFET Arrays Overview

The FDG6321C is a dual N/P-channel enhancement-mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage of 25 V and is housed in a surface-mount SOT-363 (SC-70) package with six pins. The device supports a maximum continuous drain current of 140 mA for the N-channel and 220 mA for the P-channel, with a total power dissipation rating of 300 mW. Key electrical parameters include a maximum on-resistance of 4 Ω for the N-channel and 10 Ω for the P-channel. The gate-source voltage limits are specified at -8 V and +8 V, while the operating junction temperature range extends from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating separate N-channel and P-channel enhancement-mode transistors within a single compact package.
• Logic-level gate operation designed for efficient switching control in low-voltage digital circuits.
• Surface-mount construction utilizing a standard SOT-363 footprint for automated assembly integration.

FET, MOSFET Arrays Applications

• Low-side and high-side switching in portable battery-powered devices
• Signal routing and analog/digital signal path management
• General-purpose logic level translation interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix code against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure compliance with RoHS directives and check for any recent PCN updates regarding marking or material changes before finalizing component selection.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N/P pair is required for complementary switching applications. Confirm that the 25 V breakdown voltage aligns with the system supply rails. Evaluate thermal constraints carefully, as the 300 mW power dissipation limit in the small SOT-363 package restricts high-current continuous duty cycles.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's family of low-voltage dual MOSFET arrays. It serves as a compact alternative to discrete transistor pairs, reducing board space and parasitic inductance in sensitive signal paths. The SOT-363 package is widely used in consumer electronics where minimal profile is critical.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with FDC6321C for SuperSOT-6 packaging variants or FDG6322C for different current ratings. Verify pin compatibility and on-resistance specifications before substitution to ensure circuit performance remains within design margins.