FET, MOSFET Arrays FDG6332C-F085P product image

FDG6332C-F085P

  • Description:MOSFET N/P-CH 20V 0.7A SC70-6
  • Series:-

SKU:2815e936621e Category: Brand:

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FDG6332C-F085P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.7A SC70-6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6332C-F085P

  • Description:MOSFET N/P-CH 20V 0.7A SC70-6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:700mA (Ta), 600mA (Ta)
  • Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V, 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V, 114pF @ 10V
  • Power - Max:300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-70-6
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for FDG6332C-F085P

FDG6332C-F085P

FET, MOSFET Arrays Overview

The FDG6332C-F085P is a dual N/P-channel enhancement-mode MOSFET from the onsemi PowerTrench series, housed in an SOT-363 (SC-70-6) surface-mount package. It features a maximum drain-source voltage of 20 V and continuous drain currents of 700 mA for the N-channel and 600 mA for the P-channel. The device exhibits a maximum on-resistance of 700 mΩ, with gate threshold voltages ranging from 0.3 V to 1.5 V depending on test conditions. Operating within a temperature range of -55 °C to +150 °C, it dissipates up to 300 mW and carries AEC-Q101 automotive qualification.

FET, MOSFET Arrays Feature Summary

  • Automotive-grade reliability certified under AEC-Q101 standards
  • Logic-level gate drive capability for low-voltage control applications
  • Compact SC-70-6 footprint designed for space-constrained PCB layouts

FET, MOSFET Arrays Applications

  • Battery protection circuits in portable electronic devices
  • Load switching in automotive infotainment systems
  • Power management modules for mobile handsets

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix F085 against official datasheets to confirm tape-and-reel packaging specifications. Confirm current lifecycle status as distributor records may indicate end-of-life or obsolescence. Ensure compliance with RoHS directives and material composition requirements prior to integration into production schedules.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage switching applications. The 20 V rating suits 3.3 V and 5 V logic systems. Verify that the 700 mΩ on-resistance meets thermal dissipation limits for the intended load current. Consider the SC-70-6 package dimensions for board space constraints.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of silicon MOSFETs from onsemi, optimized for efficiency and switching performance. The FDG6332C variant specifically integrates complementary N and P-channel transistors in a single package, reducing component count compared to discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Consult manufacturer documentation for direct pin-compatible alternatives.

FDG6332C-F085PFDG6332C-F085P

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