FDG6332C

FET, MOSFET Arrays Overview

The FDG6332C is a dual N/P-channel enhancement-mode MOSFET from onsemi's PowerTrench series, housed in an SOT-363 (SC-88) surface-mount package. It features a maximum drain-source voltage of 20 V with continuous drain currents of 700 mA for the N-channel and 600 mA for the P-channel. The device exhibits a maximum Rds(on) of 700 mΩ and a typical gate charge of 1.4 nC at 4.5 V. Operating within a temperature range of -55 °C to +150 °C, it offers a power dissipation of 300 mW and meets AEC-Q101 automotive qualification standards.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating independent N-channel and P-channel logic-level MOSFETs in a compact footprint.
• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle electronics.
• Enhanced switching efficiency achieved through low gate charge characteristics compatible with standard logic drivers.

FET, MOSFET Arrays Applications

• Battery protection circuits in portable electronic devices
• Load switching applications in automotive infotainment systems
• Power management modules for mobile handsets and tablets

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official onsemi documentation. Confirm that the specific ordering suffix matches the required tape-and-reel packaging format. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated N/P-channel switching capabilities. The 20 V rating suits low-voltage battery systems, while the small SOT-363 package supports high-density PCB layouts. Verify that the 700 mA current capacity aligns with the specific load requirements of the target application circuit.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family, characterized by optimized trench technology for low on-resistance. It serves as a compact solution for dual-switching needs, replacing discrete single-channel MOSFETs to reduce board area. The integration supports simplified design processes for power distribution networks in consumer and automotive sectors.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official onsemi documentation or distributor databases for verified pin-compatible alternatives if supply constraints arise.