FDJ1032C

FET, MOSFET Arrays Overview

The FDJ1032C is a complementary PowerTrench MOSFET pair in an FLMP SC75 package. It integrates a P-Channel device (Q1) rated at -20 V and -2.8 A, and an N-Channel device (Q2) rated at 20 V and 3.2 A. The Q1 exhibits a maximum RDS(ON) of 160 mΩ at VGS = -4.5 V, while the Q2 achieves 90 mΩ at VGS = 4.5 V. Operating junction temperatures range from -55°C to +150°C with thermal resistance values of 80°C/W (junction-to-ambient) and 5°C/3°C (junction-to-case for Q1/Q2).

FET, MOSFET Arrays Feature Summary

• Complementary N and P-channel configuration utilizing advanced PowerTrench technology.
• Optimized for low on-state resistance and high performance trench processes.
• Low gate charge characteristics designed for fast switching applications.
• FLMP SC75 package provides enhanced thermal performance within standard dimensions.

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• Load switch implementations
• Motor driving systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized Fairchild Semiconductor distributors due to counterfeiting risks. Confirm RoHS compliance status and check for obsolete product status notifications before procurement planning. Ensure supply chain traceability meets quality standards.

FET, MOSFET Arrays Selection Notes

Select this complementary pair for low-voltage battery-powered applications requiring minimal inline power loss. Evaluate thermal requirements against the 80°C/W junction-to-ambient resistance. Verify that system voltage does not exceed the 20 V drain-source breakdown limits for either channel.

FET, MOSFET Arrays Part Context

Manufactured by Fairchild Semiconductor using the PowerTrench process, this component represents a specialized solution for integrated power management. The FLMP SC75 packaging allows for compact board layouts while maintaining thermal efficiency suitable for portable electronics and industrial control modules.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching complementary N/P-channel configurations, voltage ratings, and package dimensions.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the N-Channel device?

The N-Channel device (Q2) supports a maximum continuous drain current of 3.2 A at TA = 25°C.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage temperature coefficient is +3 mV/°C for the P-Channel (Q1) and -3 mV/°C for the N-Channel (Q2).

What is the typical total gate charge for the P-Channel device?

The typical total gate charge (Qg) for the P-Channel device (Q1) is 3 nC under test conditions of VDS = -10 V and ID = -2.8 A.