FET, MOSFET Arrays FDM3300NZ product image

FDM3300NZ

$0.31
  • Description:MOSFET 2N-CH 20V 10A POWER33
  • Series:PowerTrench®

SKU:3e3598b48f49 Category: Brand:

  
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FDM3300NZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 10A POWER33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDM3300NZ

  • Description:MOSFET 2N-CH 20V 10A POWER33
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:10A
  • Rds On (Max) @ Id, Vgs:23mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1610pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:Power33
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDM3300NZ

FDM3300NZ

FET, MOSFET Arrays Overview

The FDM3300NZ is a dual N-channel PowerTrench MOSFET array manufactured by onsemi, housed in a surface-mount Power33 package. It features a maximum drain-source voltage of 20V and a continuous drain current of 10A. The device exhibits a maximum on-resistance of 23 milliohms at 10A with a gate-source voltage of 4.5V. Key electrical characteristics include a maximum gate charge of 17nC at 4.5V and an input capacitance of 1610pF at 10V. The component supports a junction temperature range from -55°C to 150°C and has a maximum power dissipation rating of 900mW.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration within a single compact Power33 package for space-efficient circuit design.
  • PowerTrench technology optimized for low conduction losses and high efficiency switching applications.
  • Enhanced gate drive characteristics with low gate charge to facilitate faster switching transitions.

FET, MOSFET Arrays Applications

  • DC-DC converter output stages requiring low Rds(on) and dual channel integration.
  • Load switch circuits for power management in portable electronic devices.
  • Motor control interfaces utilizing dual N-channel topology for half-bridge configurations.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the procurement source provides valid traceability records. Check for any obsolescence notices or lifecycle status updates directly from the manufacturer before finalizing acquisition plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required with a 20V voltage rating and 10A current capacity. Ensure the application operates within the 900mW power dissipation limit and utilizes a suitable thermal management strategy for the Power33 package. Verify that the gate drive voltage meets the 4.5V threshold for optimal on-resistance performance.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench series of MOSFETs from onsemi, designed for general-purpose power switching. The Power33 package offers a balance between thermal performance and footprint size compared to standard SO-8 packages. It serves as a discrete alternative to integrated power modules in cost-sensitive designs.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout compatibility, voltage ratings, and thermal characteristics. Validate that alternative components meet the same AEC-Q101 or industrial grade requirements if applicable.

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