FDMA1028NZ

FET, MOSFET Arrays Overview

The FDMA1028NZ is a dual N-channel enhancement-mode MOSFET from onsemi's PowerTrench series, housed in a MicroFET-6 surface-mount package. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 3.7 A. The device exhibits a low on-resistance of 37 mΩ at Vgs = 10 V, with a typical gate charge of 4 nC at 10 V. Electrical characteristics include a gate-source voltage range of ±12 V, a threshold voltage minimum of 0.6 V, and power dissipation capability of 1.4 W. Operating temperatures span from -55 °C to +150 °C, with rise and fall times of 8 ns.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact six-pin MLP footprint
• Low on-resistance optimized for efficient power switching applications
• Fast switching performance with 8 ns rise and fall times
• Enhanced thermal stability supporting high junction temperature operation

FET, MOSFET Arrays Applications

• DC-DC converter output stages
• Load switching circuits
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm package variant and tape-and-reel specifications. Cross-reference part numbers using manufacturer tools to ensure compatibility with existing supply chains. Confirm RoHS compliance status through official material composition documents before integration into regulated products.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation in minimal space. Evaluate thermal resistance parameters against system heat dissipation capabilities. Ensure gate drive voltages remain within the specified ±12 V limits to prevent dielectric breakdown while maintaining optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family, designed for general-purpose power switching. The MicroFET-6 package provides a balance between thermal performance and board space efficiency. It serves as a discrete solution for low-voltage, medium-current applications where dual channel functionality is required.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for equivalent parts. Verify pinout compatibility and electrical parameter margins before substitution. Manufacturer cross-reference data is provided for suggestion only; validate all technical specifications independently.