FDMA1029PZ

FET, MOSFET Arrays Overview

The FDMA1029PZ is a dual P-Channel PowerTrench MOSFET manufactured by onsemi. It features a MicroFET-6 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V, a continuous drain current (Id) of 3.1 A, and a maximum drain-source on-resistance (Rds On) of 60 mOhms. The device operates with a gate-source voltage range of -12 V to +12 V and has a threshold voltage (Vgs th) of 1.5 V. Additional specifications comprise a gate charge (Qg) of 10 nC, power dissipation (Pd) of 1.4 W, and an operating temperature range from -55 C to +150 C.

FET, MOSFET Arrays Feature Summary

• Dual channel configuration for integrated circuit design
• PowerTrench technology for enhanced performance
• MicroFET-6 surface-mount packaging

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• Load switch applications
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material composition declaration or certificate of conformity prior to procurement. Cross-reference the Mouser part number 512-FDMA1029PZ with the original datasheet to validate technical parameters.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a dual P-Channel MOSFET in a compact MicroFET-6 footprint. Ensure the application voltage does not exceed the 20 V drain-source rating and that thermal management accommodates the 1.4 W power dissipation limit. Verify compatibility with the required gate drive levels given the 1.5 V threshold specification.

FET, MOSFET Arrays Part Context

This component belongs to the FDMA1029PZ series within onsemi's PowerTrench lineup. It shares the MicroFET-6 package form factor with other devices in the family, such as the FDFMA2P029Z, though channel configurations and specific electrical ratings differ between single and dual variants.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Evaluate alternatives based on matching package dimensions, voltage/current ratings, and on-resistance values using official manufacturer cross-reference tools.