FDMA1430JP

Overview

The FDMA1430JP is a P-channel enhancement mode MOSFET from the PowerTrench series. It features a maximum drain-source voltage of 30 V and a continuous drain current of 2.9 A. The device offers a low on-resistance of 240 mΩ, with a gate threshold voltage range between 0.4 V and 1 V. It operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 1.5 W. The component utilizes an MLP package with six pins.

Feature Summary

• PowerTrench trench technology for optimized performance
• ESD-protected gate structure
• RoHS compliant and halogen-free construction

Applications

• Load switching applications
• Low-side power management circuits

Procurement Notes

Verify the specific datasheet revision and ordering information directly with onsemi or authorized distributors. Confirm that the MLP package dimensions and thermal characteristics align with your PCB layout requirements. Ensure compliance with relevant environmental regulations such as RoHS before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a compact P-channel solution with moderate current handling capabilities. The low gate threshold voltage facilitates compatibility with standard logic levels. Consider the thermal dissipation limits when determining heat sinking needs for high-duty cycle operations.

Part Context

This part belongs to onsemi's PowerTrench family, which utilizes advanced trench gate technology to achieve low on-resistance and fast switching speeds. The MLP package provides a small footprint suitable for space-constrained portable and industrial electronics.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.