FET, MOSFET Arrays FDMA3023PZ product image

FDMA3023PZ

$1.09
  • Description:MOSFET 2P-CH 30V 2.9A 6MICROFET
  • Series:PowerTrench®

SKU:dd47c4628495 Category: Brand:

  
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FDMA3023PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 2.9A 6MICROFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMA3023PZ

  • Description:MOSFET 2P-CH 30V 2.9A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2.9A
  • Rds On (Max) @ Id, Vgs:90mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:530pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-MicroFET (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMA3023PZ

FDMA3023PZ

FET, MOSFET Arrays Overview

The FDMA3023PZ is a dual P-channel PowerTrench MOSFET manufactured by onsemi. It features a MicroFET-6 surface-mount package and utilizes silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 2.9 A. The device exhibits a maximum on-resistance (Rds On) of 90 mOhms at specified gate-source voltages. Gate characteristics include a threshold voltage (Vgs th) of 1 V, a total gate charge (Qg) of 11 nC, and a maximum gate-source voltage range of -8 V to +8 V. Thermal performance allows for power dissipation up to 1.4 W, with an operating temperature range spanning from -55°C to +150°C junction temperature.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration integrated into a single compact MicroFET-6 package for space-constrained designs.
  • PowerTrench technology optimized for low on-resistance and efficient switching performance.
  • Enhancement mode operation suitable for logic-level control applications.

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Load switch circuits in portable electronics
  • Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging options such as reel, cut tape, or MouseReel are selected. Confirm RoHS compliance status through the provided Material Composition Declaration documents. Cross-reference the Mouser part number 512-FDMA3023PZ with the original onsemi catalog data to validate component authenticity and specification accuracy before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required within a MicroFET-6 footprint. Ensure the application voltage does not exceed the 30 V drain-source rating and that the thermal design accommodates the 1.4 W power dissipation limit. Verify that the gate drive signals remain within the ±8 V absolute maximum ratings to prevent device damage during operation.

FET, MOSFET Arrays Part Context

This component belongs to the FDMA3023PZ series of dual P-channel MOSFETs produced by onsemi. It is categorized under transistors and specifically falls within the MOSFETs sub-category. The device is part of the broader PowerTrench product line, which focuses on high-efficiency power switching solutions for various industrial and consumer electronic applications.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official replacement guide or contact technical support directly for verified alternative components with matching electrical and mechanical specifications.

FDMA3023PZFDMA3023PZ
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