FET, MOSFET Arrays FDMA3027PZ product image

FDMA3027PZ

  • Description:MOSFET 2P-CH 30V 3.3A 6MICROFET
  • Series:PowerTrench®

SKU:2e2d0bbde5ca Category: Brand:

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FDMA3027PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 3.3A 6MICROFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMA3027PZ

  • Description:MOSFET 2P-CH 30V 3.3A 6MICROFET
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.3A
  • Rds On (Max) @ Id, Vgs:87mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:435pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-MicroFET (2x2)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMA3027PZ

FDMA3027PZ

FET, MOSFET Arrays Overview

The FDMA3027PZ is a dual P-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in a MicroFET-6 (MLP) surface-mount package. It features a 30 V drain-source breakdown voltage and a continuous drain current of 3.3 A. The device exhibits a maximum on-resistance of 152 mΩ at -4.5 V gate drive. Key switching parameters include a gate charge of 7.2 nC and rise/fall times of 4 ns. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.4 W.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-channel configuration for space-efficient circuit designs
  • Low on-resistance optimized for efficient power switching applications
  • Fast switching characteristics with minimal delay times
  • Robust thermal performance supporting high junction temperatures

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Load switch management in portable electronics
  • Power distribution units in industrial systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm that the MicroFET-6 footprint matches the target PCB layout requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required with a 30 V voltage rating. The 152 mΩ on-resistance makes it suitable for moderate current loads up to 3.3 A. Ensure the gate drive voltage supports the specified threshold for optimal conduction.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of low-side and high-side power switches. It complements N-channel variants by providing complementary dual configurations for bridge or half-bridge topologies without requiring separate discrete components.

FET, MOSFET Arrays Replacement Considerations

FDMA3023PZ: Similar dual P-channel MOSFET but with lower on-resistance (90 mΩ) and slightly different current ratings. Verify pin compatibility and thermal performance differences before substitution.

FDMA3027PZFDMA3027PZ

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