ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FDMC3300NZA is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 8A 8PWR33. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMC3300NZA
- Description：MOSFET 2N-CH 20V 8A 8PWR33
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：26mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：815pF @ 10V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMC3300NZA
FET, MOSFET Arrays Overview
The FDMC3300NZA is a monolithic common drain N-Channel PowerTrench MOSFET designed for low-voltage applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 8A. The device specifies a maximum on-resistance of 26mΩ at VGS = 4.5V and 34mΩ at VGS = 2.5V. Packaged in an 8-pin MLP (Power 33) with dimensions of 3.3x3.3 mm, it offers over 2000V ESD protection and operates within a junction temperature range of -55°C to +150°C.
FET, MOSFET Arrays Feature Summary
- Monolithic common drain architecture consolidates dual channels on a single lead frame
- Optimized for low on-resistance performance at 2.5V gate drive voltages
- High electrostatic discharge protection exceeding 2000V
FET, MOSFET Arrays Applications
- Li-ion battery pack protection circuits
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer origin carefully, as the part was originally developed by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required reel size and tape width specifications. Ensure compliance with RoHS standards if environmental regulations apply to the target assembly process.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual N-Channel configuration is required for low-side switching. The common drain design simplifies PCB layout by connecting both drains together. Verify that the application current remains below the 8A continuous limit and that the thermal resistance constraints are met by the board copper area.
FET, MOSFET Arrays Part Context
This device belongs to the PowerTrench family of MOSFETs, which utilize advanced silicon processes to minimize on-resistance. The FDMC3300NZA specifically targets portable electronics where space is limited. The MLP package provides a low profile suitable for modern surface-mount manufacturing techniques.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
