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FDMC6680AZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET P-CH. Review the specifications below when checking this part for your BOM.
The FDMC6680AZ is an N-Channel PowerTrench SyncFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage (V_DSS) of 30V and a continuous drain current (I_D) of 49A at 25°C. The device achieves a maximum on-resistance (R_DS(on)) of 2.1mΩ at V_GS = 10V and I_D = 28A, and 3.1mΩ at V_GS = 4.5V and I_D = 22A. It utilizes a QFN package with 8 pins, specifically the POWER 56 configuration measuring 5.0x6.0mm. The component includes a built-in Schottky body diode and offers an avalanche energy rating (E_AS) of 726 mJ.
Verify the specific suffix 'Z' against official Fairchild documentation to confirm RoHS compliance status and lead-free manufacturing details. Ensure the ordering part number matches the exact datasheet revision for the FDMS/FDMC series to avoid discrepancies in electrical parameters or package dimensions. Cross-reference the manufacturer's latest release notes for any obsolescence notices.
Select this component for applications requiring low R_DS(on) at both 10V and 4.5V gate drive levels. The 30V rating suits low-voltage bus architectures. Evaluate thermal performance based on the 8-pin QFN footprint and ensure PCB layout supports the exposed drain pad for optimal heat dissipation. Confirm compatibility with logic-level drivers if operating at lower gate voltages.
This device belongs to the PowerTrench SyncFET family from Fairchild Semiconductor, optimized for high-efficiency power conversion. It integrates a MOSFET with a Schottky barrier diode to reduce switching losses. The product line targets portable electronics and industrial power supplies where space and efficiency are critical constraints.
Direct substitutes within the same series include FDMS8660AS. Verify pinout compatibility and thermal resistance values before substitution. Check for equivalent R_DS(on) specifications at the intended operating gate voltage to ensure performance parity.
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