FDMC7200

FET, MOSFET Arrays Overview

The onsemi FDMC7200 is a dual N-channel PowerTrench MOSFET array designed for surface-mount applications. It features a WDFN8 (3x3) package, providing high current density in a compact footprint. The device supports a drain-source voltage of 30V and offers continuous drain currents ranging from 6A to 8A depending on thermal conditions. On-state resistance values vary between 12mΩ and 23.5mΩ per channel, ensuring efficient power switching. Gate charge specifications are documented at 10nC and 22nC, facilitating fast switching speeds suitable for modern power management circuits.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single compact surface-mount package
• PowerTrench technology optimized for low on-state resistance
• Enhanced thermal performance via WDFN8 package design

FET, MOSFET Arrays Applications

• DC-DC converter output stages
• Battery protection circuits
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix or variant code when ordering, as parameters such as continuous current and resistance may differ slightly between sub-types. Confirm that the WDFN8 package dimensions align with your PCB footprint requirements. Ensure compatibility with standard reflow soldering profiles for leadless packages. Cross-reference the datasheet electrical characteristics against your system's maximum operating temperatures to guarantee reliability under load.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require a dual MOSFET solution in a small outline. The 30V rating suits low-voltage systems, while the low Rds(on) minimizes conduction losses. Consider the gate charge values for driving capability requirements. This part is appropriate for applications needing isolated or common-source configurations within a minimal board area.

FET, MOSFET Arrays Part Context

The FDMC7200 belongs to onsemi’s PowerTrench family, which focuses on optimizing the figure of merit for efficiency and speed. As a dual N-channel array, it consolidates two independent switches into one component, reducing bill-of-materials count. This integration supports simplified layout designs for power distribution networks in portable electronics and industrial control modules.

FET, MOSFET Arrays Replacement Considerations

Check for direct substitutes with identical pinout and package dimensions. Verify that alternative parts meet or exceed the 30V breakdown voltage and current handling capabilities. Ensure comparable gate charge and on-resistance values to maintain circuit timing and efficiency. Review thermal resistance specifications to confirm equivalent heat dissipation performance.