FET, MOSFET Arrays FDMC89521L product image

FDMC89521L

$2.38
  • Description:MOSFET 2N-CH 60V 8.2A 8PWR33
  • Series:PowerTrench®

SKU:b35c0179a4e4 Category: Brand:

  
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FDMC89521L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 8.2A 8PWR33. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMC89521L

  • Description:MOSFET 2N-CH 60V 8.2A 8PWR33
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
  • Rds On (Max) @ Id, Vgs:17mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1635pF @ 30V
  • Power - Max:1.9W (Ta), 16W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-Power33 (3x3)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMC89521L

FDMC89521L

FET, MOSFET Arrays Overview

The FDMC89521L is an N-channel enhancement mode MOSFET from the onsemi PowerTrench series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 8.2 A. The device utilizes a Power 33 surface-mount package with eight pins, measuring 3 mm by 3 mm with a height of 0.75 mm. Key electrical parameters include a maximum on-resistance of 27 mΩ, a gate threshold voltage minimum of 1 V, and typical gate charge of 17 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C, dissipating up to 1.9 W of power.

FET, MOSFET Arrays Feature Summary

  • Dual isolated channel configuration for efficient power switching
  • Low on-resistance design to minimize conduction losses
  • Enhanced gate threshold voltage for reliable logic-level drive

FET, MOSFET Arrays Applications

  • DC-DC converter circuits
  • Power management modules
  • Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official datasheets. Confirm the specific ordering suffix matches the required tape and reel or cut tape format. Ensure the date code aligns with project timelines. Cross-reference the part number with authorized distributor catalogs to confirm availability status. Validate that the received units match the specified Power 33 package dimensions.

FET, MOSFET Arrays Selection Notes

Select this component when a 60 V rating and 8.2 A current capacity are required in a compact SMD form factor. The low Rds(on) makes it suitable for efficiency-critical designs. Consider the thermal performance given the 1.9 W dissipation limit. Verify that the gate charge characteristics fit the driving circuit requirements. Ensure the operating temperature range meets the environmental constraints of the target application.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family of MOSFETs, which are designed for high-efficiency power switching applications. The series emphasizes low on-resistance and fast switching speeds. The Power 33 package provides a balance between thermal performance and board space efficiency. This specific model offers dual channels in a single compact footprint.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible substitutes with similar voltage and current ratings. Verify that any alternative maintains the same Power 33 package and 8-pin configuration. Ensure the replacement has comparable Rds(on) and gate charge specifications. Confirm that the thermal characteristics and maximum operating temperature are equivalent.

FDMC89521LFDMC89521L
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