FDMD82100

FET, MOSFET Arrays Overview

The FDMD82100L is a dual N-channel PowerTrench MOSFET array manufactured by onsemi. It features a 100V drain-source voltage rating and supports a continuous drain current of 7A at 25°C. The device utilizes a logic-level gate architecture, ensuring an on-resistance of 19.5mΩ maximum at Vgs=10V and Id=7A. With a maximum power dissipation of 1W and a junction temperature range of -55°C to 150°C, it is housed in a compact 12-PowerWDFN (3.3x5mm) surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single package for space-efficient circuit design.
• Logic-Level Gate Drive: Optimized threshold characteristics allow direct interfacing with standard logic control signals without requiring high gate voltages.
• PowerTrench Technology: Utilizes advanced trench gate architecture to achieve low specific on-resistance and improved switching performance.

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification stages
• Low-voltage motor control circuits
• Load switching applications in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix, as the primary datasheet references FDMD82100LTR. Confirm component status, as records indicate this part may be End-of-Life (EOL). Ensure compliance with RoHS3 and REACH requirements if applicable to your manufacturing standards. Check for alternative packages or updated revisions before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. The 100V rating suits low-voltage systems, while the 7A current capacity supports moderate load applications. Consider the 1W power dissipation limit and thermal management needs for the small WDFN package during high-current operation.

FET, MOSFET Arrays Part Context

This device belongs to the onsemi PowerTrench family, known for low on-resistance and fast switching capabilities. The FDMD82 series specifically targets applications requiring multiple switches in a compact form factor. It complements other discrete MOSFETs and driver ICs in power management designs.

FET, MOSFET Arrays Replacement Considerations

Check for active equivalents from onsemi or other manufacturers offering similar 100V, dual N-channel specifications in a 12-pin DFN package. Verify pin compatibility and electrical parameters such as Rds(on) and Qg to ensure seamless integration into existing designs.