FDMD8580

Description：MOSFET 2N-CH 80V 16A POWER56
Series：PowerTrench®

SKU:335faf22499d Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

FDMD8580 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 80V 16A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMD8580

Description：MOSFET 2N-CH 80V 16A POWER56
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：16A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs：4.6mOhm @ 16A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：5875pF @ 40V
Power - Max：2.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：Power56
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDMD8580

FDMD8580

FET, MOSFET Arrays Overview

The FDMD8580 is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It utilizes silicon technology and features an enhancement mode channel configuration within a Power-33-8 surface-mount package. The device supports a drain-source breakdown voltage of 80 V and delivers a continuous drain current of 82 A. Its on-resistance is specified at 4.6 mΩ, with a gate threshold voltage of 4.5 V and total gate charge of 57 nC. Operating temperatures range from -55°C to +150°C, with a power dissipation rating of 59 W.

FET, MOSFET Arrays Feature Summary

Dual N-channel architecture for synchronized switching applications
PowerTrench technology for optimized conduction losses
Enhancement mode operation for standard logic-level control

FET, MOSFET Arrays Applications

High-current DC-DC converter stages
Motor control bridge circuits
Power distribution units requiring low on-resistance

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets before integration. Check for end-of-life notices as availability may be restricted. Ensure storage conditions align with moisture sensitivity level requirements during handling.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management capabilities given the 59 W power dissipation limit in the Power-33-8 package. Compare gate charge specifications against driver capabilities to ensure efficient switching transitions. Verify that system voltage requirements remain within the 80 V drain-source breakdown rating under all operating conditions.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench series of discrete semiconductors. It serves as a high-performance switching element within the broader transistor portfolio. The dual-channel design allows for compact implementation in synchronous rectification topologies compared to single-channel alternatives.