FDMS007N08LC

Single FETs, MOSFETs Overview

The FDMS007N08LC is an N-Channel Shielded Gate PowerTrench MOSFET manufactured by onsemi. It features a Power-33-8 (PowerClip) surface-mount package designed for high-current applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 80 V and a continuous drain current (Id) of 66 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 5.7 mΩ at Vgs = 10 V. Gate specifications define a threshold voltage (Vgs(th)) of 1 V, a gate charge (Qg) of 41 nC, and a maximum gate-source voltage (Vgs) of ±20 V. Switching characteristics include a typical rise time of 2.4 ns and fall time of 2.1 ns. The component supports a power dissipation (Pd) of 57 W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Shielded Gate PowerTrench technology to achieve low specific on-resistance and optimized switching performance.
• Employs PowerClip package design to minimize internal inductance and enhance thermal conductivity for high-power density applications.
• Features robust avalanche capability and high current handling suitable for demanding power switching environments.

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Motor control circuits
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix code against the manufacturer's official datasheet to confirm pinout compatibility and thermal characteristics. Ensure the ordering part number matches the required packaging format, such as reel or cut tape, as specified in the procurement requirements. Cross-reference the RoHS and REACH compliance status with the latest regulatory documentation provided by onsemi before finalizing supply chain agreements.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring an 80 V N-Channel MOSFET with high current capacity exceeding 60 A. The low Rds(on) value makes it suitable for efficiency-critical power conversion topologies. Consider the PowerClip package for its superior thermal management compared to standard SO-8 packages. Verify that the gate drive voltage aligns with the 1 V threshold and 20 V maximum rating for reliable operation.

Single FETs, MOSFETs Part Context

The FDMS007N08LC belongs to onsemi's PowerTrench family of shielded gate MOSFETs. This series is engineered to provide industry-leading figure-of-merit values by combining low on-resistance with fast switching speeds. The PowerClip variant specifically addresses the need for reduced parasitic inductance in high-frequency switching applications, distinguishing it from traditional leaded or standard surface-mount counterparts.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating for the FDMS007N08LC?

The absolute maximum gate-source voltage (Vgs) is rated at ±20 V.

Does the FDMS007N08LC support avalanche energy ratings?

Yes, the datasheet specifies single pulse avalanche energy and avalanche current ratings, indicating robustness against inductive load switching events.