FDMS3606S

FET, MOSFET Arrays Overview

The FDMS3606S is a dual N-channel PowerTrench MOSFET from onsemi, housed in a compact Power-56-8 (PQFN) surface-mount package. It integrates two optimized N-channel transistors within a single unit, featuring an internal connection between the switch node and synchronous rectifier drain to facilitate easy layout for synchronous buck converters. Key electrical parameters include a 30V drain-source breakdown voltage (Vds), continuous drain currents of 13A and 27A for the respective channels, and low on-resistances (Rds(on)) of 8mΩ and 1.9mΩ. The device supports gate-source voltages up to ±20V, with threshold voltages around 1.1V. It operates reliably across a temperature range of -55°C to +150°C, offering high power dissipation capabilities suitable for dense power management applications.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact PQFN package
• Internal switch-node connection simplifies synchronous buck converter PCB layout
• Low on-resistance values enhance efficiency and reduce thermal stress
• Enhanced mode operation with robust thermal performance

FET, MOSFET Arrays Applications

• Synchronous step-down (buck) DC/DC converters
• Point-of-load (POL) power regulation modules
• Portable electronic device power management systems
• Industrial control board power distribution

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix or tape/reel quantity against official distributor catalogs before ordering. Confirm that the Power-56-8 package dimensions match your PCB footprint requirements. Ensure that the selected variant meets the required current and thermal specifications for your target application environment. Cross-reference the datasheet revision date to guarantee access to the most recent electrical characteristics and reliability data.

FET, MOSFET Arrays Selection Notes

Choose this component when space constraints require a dual-MOSFET solution in a small form factor. The internal node connection is critical for reducing parasitic inductance in synchronous rectification topologies. Evaluate the trade-off between the 8mΩ and 1.9mΩ Rds(on) options based on your specific load current and thermal budget. Consider the 30V rating as the maximum limit for your input voltage rails.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench series, designed for high-efficiency power switching. The FDMS3606S specifically targets applications requiring dual N-channel MOSFETs in a minimal footprint. It complements other discrete and arrayed MOSFET offerings by providing a pre-matched pair with optimized internal connections, reducing design complexity compared to using two separate discrete components.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes may include other dual N-channel 30V MOSFETs in similar PQFN packages from onsemi or competitors, provided they meet or exceed the 13A/27A current ratings and comparable Rds(on) values. Verify pinout compatibility and thermal resistance characteristics before swapping.