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FDMS3616S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is SMALL SIGNAL FIELD-EFFECT TRANSI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMS3616S
- Description：SMALL SIGNAL FIELD-EFFECT TRANSI
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMS3616S
FET, MOSFET Arrays Overview
The FDMS3616S is a dual N-channel PowerTrench MOSFET manufactured by onsemi, designed for high-efficiency power switching applications. It utilizes silicon technology and features an asymmetric configuration within the Power-56-8 (DFN 5x6) surface-mount package. The device supports a drain-source voltage of 25 V and offers continuous drain currents ranging from 16 A to 18 A depending on thermal conditions. Key electrical parameters include a maximum gate-source voltage of ±20 V, a gate threshold voltage of 2.5 V, and low on-resistance values between 3.5 mΩ and 6.6 mΩ. With a power dissipation capacity up to 2.3 W and an operating temperature range from -55°C to +150°C, it ensures reliable performance in demanding environments.
FET, MOSFET Arrays Feature Summary
- Asymmetric dual N-channel architecture optimized for efficient power management
- Low on-resistance characteristics for reduced conduction losses
- Enhanced thermal stability with extended operating temperature range
FET, MOSFET Arrays Applications
- Gaming desktops and notebooks
- NVDC server power systems
- General-purpose power switching circuits
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and material composition declarations prior to integration. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet. Validate lot traceability and quality certifications to maintain supply chain integrity and regulatory adherence.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring compact dual-N channel solutions with low Rds(on). Consider thermal management requirements given the 2.3 W power dissipation limit. Verify gate drive compatibility with the 2.5 V threshold voltage. Evaluate PCB layout constraints for the Power-56-8 package to ensure optimal heat dissipation and signal integrity.
FET, MOSFET Arrays Part Context
The FDMS3616S belongs to onsemi's PowerTrench series, focusing on high-performance silicon MOSFETs. It shares the Power-56-8 footprint with related models like FDMS3610S and FDMS3620S, allowing for potential design flexibility within the same family while offering distinct electrical characteristics tailored for specific current and resistance requirements.
FET, MOSFET Arrays Replacement Considerations
FDMS3610S and FDMS3620S are confirmed substitutes within the same package and voltage class. Verify parameter alignment for Rds(on), Id, and Qg before substitution. Ensure pinout compatibility remains consistent across these variants.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
