FDMS3620S

FET, MOSFET Arrays Overview

The FDMS3620S is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a 25V drain-source voltage rating and an asymmetric configuration within a Power-56-8 (PowerPAK) surface-mount package. The device supports continuous drain currents of up to 38A at case temperature and 18A at ambient temperature. Key electrical parameters include a maximum on-resistance of 5.5 mΩ, a gate-source voltage range of ±12V, and a threshold voltage between 800mV and 1.1V. Gate charge values are specified as 26nC and 106nC under different conditions. The component operates within a temperature range of -55°C to +150°C with a power dissipation rating of 2.5W.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual N-channel architecture for independent control of paired transistors
• PowerTrench technology optimized for low conduction losses and efficient switching
• Surface-mount Power-56-8 package designed for high thermal performance in compact layouts

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring low-voltage synchronous rectification
• Load switch applications in portable electronic devices
• Power management modules in automotive infotainment systems

FET, MOSFET Arrays Procurement Notes

Verify current availability status directly with the manufacturer or authorized distributors, as supply constraints may apply. Confirm RoHS compliance documentation and material composition declarations prior to integration. Ensure ordering suffixes match specific packaging requirements such as reel or cut tape formats. Validate that the component meets all relevant environmental standards for the intended deployment region.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation with distinct current handling capabilities per channel. The 25V rating suits low-voltage bus architectures. Evaluate thermal resistance characteristics against PCB copper area constraints. Compare gate charge specifications against driver output capabilities to ensure adequate switching speed without excessive drive current demands.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of asymmetric dual MOSFETs from onsemi. It utilizes the PowerTrench generation process to achieve low on-resistance. The Power-56-8 package provides a balance between electrical performance and footprint efficiency. It serves as a discrete solution for applications needing two controlled paths within a single封装.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same Power-56-8 family. Verify that substitute parts maintain equivalent Vds ratings and Rds(on) limits. Ensure thermal characteristics and gate charge profiles align with existing circuit designs to prevent performance degradation.