FDMS3622S

FET, MOSFET Arrays Overview

The FDMS3622S is a dual N-channel enhancement mode MOSFET from onsemi's PowerTrench series, housed in an 8-pin Power-56 package. It features a drain-source voltage rating of 25 V and a continuous drain current of 34 A. The device exhibits a maximum on-resistance of 7 mΩ at room temperature. Gate-source voltage limits are specified between -12 V and +12 V, with a threshold voltage range of 0.8 V to 1.4 V. Total gate charge is typically 26 nC at 10 V. The component supports surface mount installation and operates within a junction temperature range of -55 °C to +150 °C, with a power dissipation rating of 2.5 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Low on-resistance characteristics for efficient power switching
• Enhanced thermal performance via the Power-56 package

FET, MOSFET Arrays Applications

• Notebook computer power management systems
• Gaming console DC-DC conversion stages
• Server motherboard voltage regulation modules

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturing origin and lot traceability before integration. Confirm RoHS compliance status through official documentation as regulatory requirements may vary by region. Ensure the component matches the exact suffix designation required for your assembly process. Check for any obsolescence notices or lifecycle changes directly from the manufacturer. Validate that the supplier provides genuine parts with proper anti-counterfeit guarantees.

FET, MOSFET Arrays Selection Notes

Compare the 7 mΩ on-resistance against system efficiency targets. Evaluate the 34 A current capability relative to peak load requirements. Consider the 25 V breakdown voltage margin for input supply variations. Assess the 26 nC gate charge impact on driver selection and switching frequency limitations. Review the thermal resistance specifications for adequate heat sinking design.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's PowerTrench family, designed for low-voltage high-current applications. It serves as a direct replacement for legacy Fairchild Semiconductor devices in similar form factors. The Power-56 package allows for compact PCB layouts while maintaining robust electrical performance. It is commonly used in portable electronics and computing infrastructure power stages.

FET, MOSFET Arrays Replacement Considerations

FDMS3620S: Similar 25 V dual N-channel MOSFET but with different Rds(on) and current ratings. Verify pinout compatibility and thermal characteristics before substitution.