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FDMS3624S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 17.5A/30A 8PQFN. Review the specifications below when checking this part for your BOM.
The FDMS3624S is a dual N-channel PowerTrench MOSFET manufactured by onsemi, housed in an 8-lead Power-56 (PowerTDFN) surface-mount package. It features a 25V drain-source breakdown voltage and supports continuous drain currents of up to 30A. The device exhibits a maximum on-resistance of 5mΩ at 10V gate drive. Electrical characteristics include a gate threshold voltage range of 800mV to 1.1V and total gate charge values of 26nC and 59nC under specified test conditions. The component operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 2.5W.
Verify current availability status as the component may be discontinued or subject to supply constraints. Confirm RoHS compliance documentation prior to integration. Ensure ordering suffixes match specific packaging requirements such as reel or cut tape formats. Validate that the supplier provides official datasheets and ECAD models for design verification.
Select this component when a dual N-channel topology is required within a small footprint. Compare Rds(on) and Qg parameters against alternative devices to ensure compatibility with existing gate driver capabilities. Verify thermal management solutions align with the 2.5W power dissipation limit and operating temperature range.
This part belongs to the FDMS series of dual MOSFETs from onsemi, designed for low-voltage power switching applications. It utilizes Silicon technology and is marketed under the PowerTrench brand. The Power-56 package offers thermal efficiency suitable for dense PCB layouts.
Check for direct substitutes within the FDMS series or other dual N-channel MOSFETs with similar 25V ratings and comparable Rds(on) values. Ensure pinout compatibility and package dimensions match the existing board layout before substitution.
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