FET, MOSFET Arrays FDMS3660AS product image

FDMS3660AS

$0.57
  • Description:MOSFET 2N-CH 30V 13A/30A POWER56
  • Series:PowerTrench®

SKU:3a5adb38d600 Category: Brand:

  
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FDMS3660AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 13A/30A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS3660AS

  • Description:MOSFET 2N-CH 30V 13A/30A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:13A, 30A
  • Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2230pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS3660AS

FDMS3660AS

FET, MOSFET Arrays Overview

The FDMS3660AS is a dual N-channel PowerTrench MOSFET from onsemi, housed in a Power-56-8 surface-mount package. It features an asymmetric configuration with a drain-source breakdown voltage (Vds) of 25 V. The device supports continuous drain currents of 15 A and 30 A for its respective channels. On-resistance (Rds(on)) values are specified at 5.6 mOhms and 1.6 mOhms. Gate-source voltage limits range from -20 V to +20 V, with a threshold voltage (Vgs(th)) between 2.7 V and 3 V. Total gate charge (Qg) is rated at 27 nC and 82 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2.5 W.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual N-channel architecture optimized for synchronous rectification applications
  • Enhancement mode operation utilizing PowerTrench technology for low conduction losses
  • Surface-mount Power-56-8 packaging designed for automated assembly

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC-DC converters
  • Power management circuits in computing equipment
  • Low-voltage power stage implementations

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and compliance documentation directly from onsemi before integration. Confirm that the Power-56-8 footprint matches the target PCB layout. Ensure thermal management strategies align with the 2.5 W power dissipation limit under expected operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a 25 V asymmetric dual MOSFET is required for high-efficiency power conversion. Compare Rds(on) and Qg specifications against alternative packages to ensure compatibility with thermal constraints and switching frequency requirements in the target design.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of PowerTrench MOSFETs manufactured by onsemi. It is categorized under discrete semiconductors and transistors. The product line targets efficient power switching solutions for industrial and consumer electronics markets.

FET, MOSFET Arrays Replacement Considerations

The FDMS3660AS is marked as End-of-Life (EOL). Designers should consult official substitution guides or contact onsemi sales for verified replacement components that maintain electrical and mechanical compatibility.

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