FET, MOSFET Arrays FDMS3664S product image

FDMS3664S

$1.16
  • Description:MOSFET 2N-CH 30V 13A/25A POWER56
  • Series:PowerTrench®

SKU:c2b8d5f25767 Category: Brand:

  
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FDMS3664S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 13A/25A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS3664S

  • Description:MOSFET 2N-CH 30V 13A/25A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:13A, 25A
  • Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1765pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS3664S

FDMS3664S

FET, MOSFET Arrays Overview

The FDMS3664S is a dual N-channel PowerTrench MOSFET from onsemi, housed in an 8-PowerTDFN (Power-56-8) surface-mount package. It features asymmetric channel configurations with a drain-source voltage rating of 30 V. The device supports continuous drain currents of 13 A and 25 A at 25°C, depending on the specific channel. Maximum on-resistance values are specified as 8 mΩ and 2.6 mΩ. Gate-source voltage limits range from -20 V to +20 V, with a threshold voltage maximum of 2.7 V. The component operates within a junction temperature range of -55°C to +150°C and includes a maximum power dissipation rating of 2.5 W.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual N-channel configuration optimized for synchronous buck converter applications
  • Internally connected switch node to facilitate layout and reduce circuit inductance
  • Low inductance packaging design to shorten rise and fall times
  • Logic level gate drive capability for efficient control

FET, MOSFET Arrays Applications

  • Notebook VCORE power stages
  • General purpose point-of-load regulation
  • Computing power supplies
  • Communications equipment power management

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the component meets RoHS compliance requirements for your specific region. Check for any lead-free status certifications if required by your manufacturing standards. Confirm the package type matches the 8-PowerTDFN specification before integration into the PCB design.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for low-voltage synchronous rectification. The asymmetric design allows for optimized efficiency between the high-side switch and low-side SyncFET. Consider the thermal performance and package size constraints when evaluating alternatives. Verify that the gate drive voltage levels are compatible with the logic-level thresholds specified in the datasheet.

FET, MOSFET Arrays Part Context

The FDMS3664S belongs to the FDMS series of PowerStage devices from onsemi. These components integrate two specialized N-channel MOSFETs into a single dual PQFN package. The series is designed to provide optimal power efficiency for synchronous buck converters by minimizing external component count and reducing switching losses through integrated switch node connections.

FET, MOSFET Arrays Replacement Considerations

FDMS3604S is a documented similar part number within the same product family.

FDMS3664SFDMS3664S
$1.16
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