FET, MOSFET Arrays FDMS3669S product image

FDMS3669S

$2.20
  • Description:MOSFET 2N-CH 30V 13A/18A POWER56
  • Series:PowerTrench®

SKU:5ca992c24197 Category: Brand:

  
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FDMS3669S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 13A/18A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS3669S

  • Description:MOSFET 2N-CH 30V 13A/18A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:13A, 18A
  • Rds On (Max) @ Id, Vgs:10mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1605pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS3669S

FDMS3669S

FET, MOSFET Arrays Overview

The FDMS3669S is a dual N-channel PowerTrench MOSFET manufactured by onsemi, housed in a Power-56-8 (DFN 5x6) surface-mount package. It features a 30V drain-source voltage rating and supports a continuous drain current of 60A. The device exhibits a maximum on-resistance of 10mΩ at Vgs=10V. Gate specifications include a threshold voltage of 2V and a total gate charge of 34nC. Switching performance is characterized by rise and fall times of 3ns each. The component operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 2.5W.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration for synchronous rectification or half-bridge applications
  • PowerTrench technology for low conduction losses
  • Enhanced switching speed with 3ns rise and fall times
  • RoHS compliant lead-free packaging

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • Low voltage motor control circuits
  • Power management modules requiring high current density

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging options such as reel, cut tape, or MouseReel configurations. Confirm compliance status including REACH SVHC details directly from the source documentation before procurement integration.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring a 30V rating with high current handling capabilities up to 60A. Ensure the thermal design accommodates the 2.5W power dissipation limit in the Power-56-8 package. Verify that the gate drive voltage aligns with the 10V specification for optimal Rds(on) performance.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of dual MOSFETs from onsemi, designed for compact power solutions. It utilizes the Power-56-8 package to provide a small footprint while maintaining robust electrical characteristics suitable for modern portable and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult the official onsemi cross-reference list for verified substitutes. No direct public substitute part numbers are confirmed in the provided data.

FDMS3669SFDMS3669S
$2.20
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