FDMS5362L

$0.27

Description：MOSFET N-CH
Series：*

SKU:efe142cbb28c Category: FET, MOSFET Arrays Brand: Fairchild Semiconductor

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Product introduction

FDMS5362L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS5362L

Description：MOSFET N-CH
Series：*
Mfr：Fairchild Semiconductor
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDMS5362L

FDMS5362L

FET, MOSFET Arrays Overview

The FDMS5362L is an N-channel Power Trench MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 100 V and a continuous drain current of 4.4 A. The device utilizes the advanced Power Trench process to minimize on-state resistance, specified at a maximum of 60 mΩ. It is housed in a surface-mount Power 33 package with eight pins, measuring 3 mm in length, 2 mm in width, and 0.95 mm in height. The component supports a maximum power dissipation of 2100 mW and operates within a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

Utilizes advanced Power Trench process technology for minimized on-state resistance.

FET, MOSFET Arrays Applications

Power management circuits requiring high-efficiency switching.

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer datasheet for the specific electrical characteristics and thermal performance limits before integration. Confirm that the Power 33 package dimensions align with the target PCB footprint. Ensure gate-source voltage ratings remain within the specified +/- 20 V limits during operation to prevent device damage.

FET, MOSFET Arrays Selection Notes

Select this component when a single N-channel MOSFET with 100 V rating and 4.4 A current capacity is required. The low on-resistance makes it suitable for applications prioritizing efficiency. Consider the thermal dissipation capabilities relative to the ambient operating conditions and available heatsinking options.

FET, MOSFET Arrays Part Context

This part belongs to the Power Trench MOSFET family from Fairchild Semiconductor. It represents a discrete power semiconductor solution designed for surface-mount assembly. The technology focuses on reducing conduction losses while maintaining robust switching performance in compact packages.