FDMS7620S-F106

FET, MOSFET Arrays Overview

The FDMS7620S is a dual N-Channel PowerTrench MOSFET in a Power 56 package. It integrates a low-switching-loss High Side Q1 and a low-conduction-loss Low Side Q2 SyncFET. Q1 features a maximum RDS(on) of 20 mΩ at VGS=10V, ID=10.1A, with a continuous drain current of 13A (TC=25°C). Q2 has a maximum RDS(on) of 11.2 mΩ at VGS=10V, ID=12.4A, with a continuous drain current of 22A (TC=25°C). Both channels support a VDS of 30V and operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Optimized synchronous buck power stage combining high-side switching efficiency with low-side conduction performance.
• SyncFET technology embeds a Schottky diode parallel to the MOSFET for improved reverse recovery characteristics.
• Pinout optimized for simple PCB design within a thermally efficient dual Power 56 package.

FET, MOSFET Arrays Applications

• Notebook system power supplies
• General purpose point of load converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status through the provided datasheet or material composition documents before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a compact dual MOSFET solution for synchronous rectification. Evaluate thermal resistance values based on the specific copper pad area and FR-4 board dimensions used in the design to ensure adequate heat dissipation.

FET, MOSFET Arrays Part Context

This device belongs to the FDMS7620S series manufactured by onsemi. It utilizes the PowerTrench and SyncFET technologies to deliver optimized performance for DC-DC conversion stages in portable electronics.

FET, MOSFET Arrays Replacement Considerations

Consult the manufacturer's cross-reference tools for verified substitutes. Ensure any replacement maintains the 30V rating, compatible pinout, and similar thermal characteristics for the Power 56 package.

FET, MOSFET Arrays FAQ

What is the difference between Q1 and Q2 in the FDMS7620S?

Q1 is designed for low switching loss suitable for the High Side position, while Q2 is a SyncFET optimized for low conduction loss suitable for the Low Side position.

How does the SyncFET body diode behave compared to a discrete Schottky?

The embedded SyncFET body diode exhibits characteristics similar to a discrete external Schottky diode but may show increased leakage current at high temperatures and reverse voltages.