FDMS8025AS

$0.39

Description：MOSFET N-CH
Series：*

SKU:2506bdca2d40 Category: FET, MOSFET Arrays Brand: Fairchild Semiconductor

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Product introduction

FDMS8025AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS8025AS

Description：MOSFET N-CH
Series：*
Mfr：Fairchild Semiconductor
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDMS8025AS

FDMS8025AS

FET, MOSFET Arrays Overview

The FDMS8025AS is an N-Channel PowerTrench SyncFET designed for high-efficiency power conversion. It features a maximum drain-source on-resistance of 2.8 mΩ at VGS = 10V and ID = 24A, and 3.5 mΩ at VGS = 4.5V and ID = 21A. The device integrates a Schottky body diode to enhance performance. It utilizes advanced package and silicon technology to minimize losses while maintaining robust reliability through MSL1 packaging and 100% UIS testing.

FET, MOSFET Arrays Feature Summary

Advanced package and silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode integration
MSL1 robust package design

FET, MOSFET Arrays Applications

DC-DC converters
Synchronous rectification applications

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix when sourcing, as Fairchild Semiconductor is now ON Semiconductor. Check if the specific 'AS' suffix is required for your application or if the standard 'FDMS8025S' variant is acceptable. Confirm RoHS compliance status with the supplier. Ensure the component meets moisture sensitivity level requirements for your assembly process.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low conduction losses in synchronous rectifier topologies. The integrated Schottky body diode reduces reverse recovery losses compared to standard MOSFETs. Consider the thermal management capabilities provided by the package design. Evaluate the gate drive voltage requirements, noting the specified resistance values at 10V and 4.5V.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench SyncFET family from Fairchild Semiconductor (now ON Semiconductor). These components are engineered to replace discrete MOSFETs with external diodes in synchronous rectifier circuits. The series focuses on minimizing total system loss through optimized silicon and packaging technologies.