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FDMS9408 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMS9408
- Description：MOSFET N-CH
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMS9408
FET, MOSFET Arrays Overview
The FDMS9408 is an N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a maximum drain-source voltage of 40 V and a continuous drain current rating of 80 A. The device exhibits a typical on-resistance (Rds(on)) of 1.8 mΩ at a gate-source voltage of 10 V. Key electrical characteristics include a maximum input capacitance of 5120 pF measured at 25 V, and a junction temperature operating range from -55°C to 175°C. The component is designed for surface mount applications.
FET, MOSFET Arrays Feature Summary
- Utilizes PowerTrench technology for enhanced switching performance
- Supports high current handling capabilities up to 80 A
- Features low on-resistance for improved efficiency
FET, MOSFET Arrays Applications
- Synchronous buck converter designs
- High-efficiency power conversion systems
- DC-DC module implementations
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix designation when ordering, as variations such as F085 may indicate distinct packaging or tape-and-reel configurations. Confirm that the required thermal and electrical specifications align with the target application's operational limits. Ensure compatibility with existing board layouts and mounting requirements before finalizing procurement decisions.
FET, MOSFET Arrays Selection Notes
Select this component for applications requiring robust N-channel switching with minimal conduction losses. The low Rds(on) value supports efficient power management in space-constrained environments. Evaluate the 40 V voltage rating against system peak voltages to ensure adequate safety margins during transient conditions.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench MOSFET family, which integrates advanced trench gate technology. The series is engineered to balance high current density with low thermal resistance. It serves as a discrete solution for power stages where board space optimization and thermal performance are critical design constraints.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence if considering alternative manufacturers or variants within the same product line.
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