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FDPC8016S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 20A PWRCLIP56. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDPC8016S
- Description：MOSFET 2N-CH 25V 20A PWRCLIP56
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：20A, 35A
- Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2375pF @ 13V
- Power - Max：2.1W, 2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：Power Clip 56
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDPC8016S
FET, MOSFET Arrays Overview
The FDPC8016S is a dual N-channel PowerTrench MOSFET from onsemi, housed in an 8-pin WDFN package. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 26 A. The device exhibits a maximum on-resistance (Rds(on)) of 9.2 mΩ. Operating within a temperature range of -55°C to 150°C, it has a power dissipation (Pd) of 2 W. Typical gate charge (Qg) is 13 nC at the specified gate-source voltage.
FET, MOSFET Arrays Feature Summary
- Asymmetric dual configuration for efficient half-bridge applications
- Low on-resistance for reduced conduction losses
- Compact surface-mount packaging for high-density designs
FET, MOSFET Arrays Applications
- DC-DC converter output stages
- Motor driver low-side switches
- Power management integrated circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct electrical characteristics and packaging options. Confirm RoHS compliance status and material composition declarations directly with the supplier or through official documentation before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel solution with 30 V rating and 26 A current capacity is required. Ensure the thermal design accommodates the 2 W power dissipation limit in the WDFN package. Verify that the gate drive requirements align with the typical 13 nC gate charge specification for optimal switching performance.
FET, MOSFET Arrays Part Context
This part belongs to the PowerTrench series by onsemi, designed for general-purpose power switching. It complements other variants like the FDPC8011S and FDPC8013S, which offer different current and resistance ratings within the same family and package structure.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the manufacturer's cross-reference tools or official replacement guides for verified alternatives.
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