FDPF15N65

Single FETs, MOSFETs Overview

The FDPF15N65 is a high-performance N-channel MOSFET from onsemi's UniFET family, utilizing planar stripe and DMOS technology. It features a 650V drain-source voltage rating and a continuous drain current of 15A at 25°C case temperature. Key electrical parameters include a typical R_DS(on) of 360 mΩ at V_GS=10V, a gate charge of 48.5 nC, and a reverse transfer capacitance (C_rss) of 23.6 pF. The device supports a single pulse avalanche energy of 637 mJ and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance reduces power loss and improves efficiency in switching applications.
• Low gate charge enables faster switching speeds and minimizes switching losses.
• Low reverse transfer capacitance mitigates Miller effect for enhanced stability.
• 100% avalanche tested to ensure reliability under energy stress conditions.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) circuits
• Flat Panel Display (FPD) television power supplies
• ATX computer power supplies
• Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm package type and tape/reel specifications. Ensure compliance with RoHS and halide-free requirements if mandated by your design constraints. Cross-reference the absolute maximum ratings with your system's peak voltage and current transients to prevent overstress. Confirm thermal management strategies align with the specified power dissipation derating curves for your operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage switching with efficient thermal performance. The combination of low R_DS(on) and optimized gate charge makes it suitable for medium-frequency converters. Evaluate the avalanche energy rating against potential inductive load spikes. Consider the TO-220AB package for through-hole mounting and adequate heat sinking capabilities relative to the 38.5W power dissipation limit at 25°C.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's UniFET MOSFET series, designed for general-purpose power switching. It leverages advanced DMOS technology to balance conduction and switching losses. The family targets cost-sensitive yet high-efficiency power conversion architectures common in consumer electronics and industrial power supplies.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference guides for direct pin-compatible alternatives with matching voltage and current ratings. Verify that substitute devices meet or exceed the 650V V_DSS and 15A I_D specifications. Ensure thermal resistance and package dimensions are compatible with existing PCB footprints and heatsinking solutions.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy the FDPF15N65 can withstand?

The device is rated for a repetitive avalanche energy (E_AR) of 25.0 mJ.

How does the gate charge affect switching performance?

With a typical gate charge of 48.5 nC, the device requires less energy to switch, resulting in reduced switching losses and improved overall efficiency.