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FDS4470 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 40V 12.5A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS4470
- Description：MOSFET N-CH 40V 12.5A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：+30V, -20V
- Input Capacitance (Ciss) (Max) @ Vds：2659 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS4470
Single FETs, MOSFETs Overview
The FDS4470 is an N-channel enhancement mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 12.5 A. The device exhibits a maximum on-resistance (Rds(on)) of 9 mΩ at a gate-source voltage of 10 V. Typical gate charge (Qg) is 21 nC at 10 V. It operates within a temperature range of -55°C to +150°C junction temperature, with a maximum power dissipation of 2.5 W in an SOIC-8 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Designed to improve overall efficiency in DC/DC converters using synchronous or conventional topologies
- Utilizes PowerTrench process technology for enhanced performance
- N-channel enhancement mode construction
Single FETs, MOSFETs Applications
- DC-to-DC converter circuits
- Synchronous rectification applications
- Conventional switching regulator designs
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors. Confirm manufacturing status as the part may be obsolete. Check datasheet revisions for parameter updates. Ensure packaging matches design requirements. Validate thermal characteristics against application needs.
Single FETs, MOSFETs Selection Notes
Evaluate Rds(on) and gate charge for switching loss calculations. Consider thermal resistance for heat dissipation in SOIC-8 packages. Verify voltage and current ratings exceed circuit demands. Assess compatibility with control logic levels. Review package dimensions for PCB layout constraints.
Single FETs, MOSFETs Part Context
The FDS4470 belongs to onsemi's PowerTrench family of N-channel MOSFETs. This series targets low-voltage, high-current applications requiring efficient power conversion. The device integrates advanced trench gate technology to minimize conduction losses while maintaining robust switching capabilities for modern power supply designs.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes with identical 40V, 12.5A specifications and SOIC-8 packaging. Verify pinout compatibility before substitution. Compare Rds(on) and Qg values to ensure equivalent performance. Confirm availability if the original part is discontinued.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
