FDS4559-F085

FET, MOSFET Arrays Overview

The FDS4559-F085 is a dual N-Channel and P-Channel MOSFET from onsemi, utilizing PowerTrench technology. It features a 60V drain-source breakdown voltage (Vds) and operates in an enhancement mode. The device is housed in an SOIC-8 surface-mount package. Key electrical parameters include a continuous drain current of 3.5A for the N-Channel and 4.5A for the P-Channel. The maximum on-resistance (Rds(on)) is specified at 55 mOhms. Gate-source voltage limits are ±20V, with threshold voltages of 1V for the N-Channel and 3V for the P-Channel. Total gate charge is 18nC for the N-Channel and 21nC for the P-Channel. The component supports a power dissipation of 2W and functions within a temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating single N-Channel and P-Channel transistors in one compact package.
• PowerTrench silicon technology designed for efficient switching performance.
• Enhancement mode operation suitable for low-side and high-side control applications.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring complementary switching pairs.
• Motor driver interfaces for small DC motors.
• Load switch implementations in portable electronic devices.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix F085 against official datasheets to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status through manufacturer documentation. Check for end-of-life notifications or obsolescence warnings prior to design finalization. Ensure supply chain availability aligns with project timelines given potential discontinuation risks associated with older product lines.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require both N-Channel and P-Channel MOSFETs with matching 60V ratings. Evaluate thermal management requirements based on the 2W power dissipation limit in an SOIC-8 package. Compare gate charge values against drive capabilities to ensure adequate switching speeds. Verify that the 55 mOhm on-resistance meets efficiency targets for the intended load currents.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench family of MOSFETs, known for optimized Rds(on) versus gate charge characteristics. The FDS4559 specifically addresses applications needing complementary channel pairs without occupying separate board real estate. It represents a standard solution for mid-voltage switching tasks in consumer and industrial electronics where moderate current handling is sufficient.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for direct equivalents. Potential substitutes may include other dual N/P MOSFETs in SOIC-8 packages with similar 60V ratings and comparable pinouts. Verify parameter alignment for Rds(on), Vgs(th), and thermal resistance before substitution.