FDS4895C

FET, MOSFET Arrays Overview

The FDS4895C is a dual N- and P-channel enhancement mode power MOSFET manufactured using the PowerTrench process. It integrates an N-channel transistor (Q1) rated at 40V, 5.5A with RDS(on) of 39mΩ @ VGS=10V, and a P-channel transistor (Q2) rated at -40V, -4.4A with RDS(on) of 46mΩ @ VGS=-10V. The device operates within a junction temperature range of -55°C to +150°C and features a maximum gate-source voltage of ±20V. Total gate charge reaches 7nC for Q1 and 10nC for Q2. Thermal resistance from junction to ambient is 78°C/W on a 0.5 in² copper pad.

FET, MOSFET Arrays Feature Summary

• Dual configuration combining N-channel and P-channel transistors in a single surface mount package
• PowerTrench process technology optimized for low on-state resistance and high switching performance
• High power handling capability suitable for compact designs

FET, MOSFET Arrays Applications

• Motor control circuits
• DC/DC conversion systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and pin alignment before soldering. Ensure storage conditions remain within specified limits to prevent moisture damage. Review RoHS compliance status if required by local regulations. Validate ordering suffixes match specific reel or tape configurations.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require both N-channel and P-channel switching capabilities. Evaluate thermal management requirements based on the 78°C/W junction-to-ambient resistance value. Consider gate drive voltages to ensure optimal RDS(on) performance, particularly for the P-channel side which requires negative voltage levels. Verify current ratings align with peak load demands.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs produced by Fairchild Semiconductor, now part of onsemi. It utilizes advanced planar trench technology to achieve low conduction losses while maintaining fast switching speeds. The SO-8 package provides a widely used footprint for surface mount assembly, facilitating integration into various power electronics applications.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the FDS4897C, which offers similar dual-channel characteristics but may differ in specific current ratings and on-resistance values. Verify pinout compatibility and thermal performance metrics before substitution.