FET, MOSFET Arrays FDS4935 product image

FDS4935

  • Description:MOSFET 2P-CH 30V 7A 8SOIC
  • Series:PowerTrench®

SKU:164d606a9c23 Category: Brand:

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FDS4935 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 7A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS4935

  • Description:MOSFET 2P-CH 30V 7A 8SOIC
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:23mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:1233pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS4935

FDS4935

FET, MOSFET Arrays Overview

The FDS4935 is a dual P-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It features a –30 V drain-source voltage and a continuous drain current of –7 A. The device exhibits an on-resistance of 23 mΩ at VGS = –10 V and 35 mΩ at VGS = –4.5 V. Total gate charge is typically 15 nC, supporting fast switching speeds. It operates within a junction temperature range of –55°C to +175°C and utilizes an SO-8 surface-mount package.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration with rugged gate design optimized for wide drive voltage ratings from 4.5V to 25V.
  • High-performance trench technology enabling extremely low on-resistance and high power handling capability.
  • Fast switching speed combined with low gate charge for efficient power management applications.

FET, MOSFET Arrays Applications

  • Power management circuits
  • Load switch implementations
  • Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the specific revision level (Rev B(W)) matches the required datasheet specifications. Ensure the SO-8 package marking corresponds to the ordered part number before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual P-Channel switching with low on-resistance. Verify that the gate drive voltage falls within the specified 4.5V to 25V range. Check thermal requirements against the 78°C/W junction-to-ambient resistance for the intended copper pad area.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench family of MOSFETs, representing an advanced process for power management. It serves as a dual-channel solution derived from single-channel variants, offering integrated switching capabilities in a compact SO-8 footprint for space-constrained electronic designs.

FET, MOSFET Arrays Replacement Considerations

The FDS4935A is a documented variant within the same product line. Verify pinout compatibility and electrical parameter alignment when substituting between these specific part numbers.

FDS4935FDS4935

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