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FDS6630A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 30V 6.5A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS6630A
- Description：MOSFET N-CH 30V 6.5A 8SOIC
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS6630A
Single FETs, MOSFETs Overview
The FDS6630A is an N-Channel PowerTrench MOSFET designed to enhance the efficiency of DC/DC converters and motor drives. It utilizes high-performance trench technology to achieve low on-resistance and fast switching speeds. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 21A. Typical on-resistance values are specified as 35 milliohms at a gate-source voltage of 10V and 50 milliohms at 4.5V, with a typical gate charge of 5 nanocoulombs.
Single FETs, MOSFETs Feature Summary
- High-performance trench technology for extremely low on-resistance
- Optimized for low gate charge and fast switching speed
- Designed to improve overall efficiency in synchronous or conventional switching PWM controllers
Single FETs, MOSFETs Applications
- DC/DC converters
- Motor drives
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by ON Semiconductor. Confirm that the component is sourced from authorized distributors to ensure authenticity. Check for specific ordering suffixes that may indicate package variations or environmental compliance status. Ensure the part number matches the exact electrical specifications required for the target circuit design.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 30V N-Channel MOSFET with high current handling capabilities. The low gate charge and fast switching characteristics make it suitable for high-frequency power conversion topologies. Evaluate thermal management requirements based on the power dissipation limits under the expected load conditions and ambient temperature.
Single FETs, MOSFETs Part Context
This component belongs to the PowerTrench family of MOSFETs, which are engineered for superior performance in power switching applications. The series is characterized by advanced trench gate technology that minimizes conduction losses while maintaining robust switching behavior. This specific model represents a standard offering within the lineup for general-purpose power management solutions.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 30V N-Channel MOSFETs from the same manufacturer family. Verify pinout compatibility and thermal resistance parameters before substitution. Ensure that any alternative device meets or exceeds the original on-resistance and gate charge specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
