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FDS6672A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 30V 12.5A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS6672A
- Description：MOSFET N-CH 30V 12.5A 8SOIC
- Series：PowerTrench®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：5070 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS6672A
Single FETs, MOSFETs Overview
The FDS6672A is an N-Channel PowerTrench MOSFET manufactured by onsemi, formerly Fairchild Semiconductor. It features a 30V drain-source voltage and a continuous drain current of 12.5A at 25°C. The device offers a maximum on-resistance of 8mΩ at 14A with a 10V gate drive. Key electrical parameters include a gate charge of 46nC at 4.5V and an input capacitance of 5070pF at 15V. It operates within a temperature range of -55°C to 150°C junction temperature and is housed in an 8-SOIC surface-mount package.
Single FETs, MOSFETs Feature Summary
- PowerTrench technology for low on-resistance
- Optimized for synchronous rectifier applications
- Ultra-low gate charge characteristics
Single FETs, MOSFETs Applications
- DC/DC converters
- Synchronous rectification
- Conventional switching PWM controllers
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific part number matches the required 8-SOIC package and power dissipation ratings. Ensure compatibility with existing design specifications regarding voltage and current limits before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for low-side synchronous rectifier designs requiring high efficiency in a compact form factor. Evaluate thermal management requirements based on the 2.5W power dissipation rating at ambient temperature. Consider the gate charge specifications when designing driver circuits to optimize switching performance and minimize losses.
Single FETs, MOSFETs Part Context
This component belongs to the PowerTrench family of MOSFETs designed for improved efficiency in power conversion applications. The series utilizes advanced trench technology to achieve low on-resistance values. This specific model represents a standard offering within the portfolio for general-purpose switching applications.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-references from onsemi or other manufacturers offering identical 30V, 12.5A specifications in an 8-SOIC package. Verify pinout compatibility and electrical parameter equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
