ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FDS6679Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 13A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS6679Z
- Description：MOSFET P-CH 30V 13A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：94 nC @ 10 V
- Vgs (Max)：+20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds：3803 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS6679Z
Single FETs, MOSFETs Overview
The FDS6679Z is a P-Channel PowerTrench MOSFET designed for DC/DC converters and battery chargers. It features a drain-source voltage of -30 V and continuous drain current of -13 A. The on-resistance is 9 mΩ at VGS = -10 V and 13 mΩ at VGS = -4.5 V. Gate-source voltage is rated at -25 V. Total gate charge is 94 nC. Operating temperature ranges from -55°C to +175°C. Power dissipation is 2.5 W in an SSOP-8 package.
Single FETs, MOSFETs Feature Summary
- High performance trench technology for extremely low RDS(ON)
- Extended VGSS range (-25V) for battery applications
- ESD protection diode connected between gate and source
Single FETs, MOSFETs Applications
- Synchronous switching PWM controllers
- Conventional switching PWM controllers
- Battery chargers
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor while other sources list onsemi. Confirm the specific ordering suffix matches the required reel size and tape width specifications. Ensure the component meets RoHS requirements if applicable to your design constraints. Cross-reference the part marking with the official datasheet documentation.
Single FETs, MOSFETs Selection Notes
Select this component when high efficiency and fast switching are required for DC/DC power supply designs. The extended gate-source voltage rating makes it suitable for battery-powered applications. Consider the thermal resistance characteristics and ensure adequate board copper area for heat dissipation to maintain safe operating temperatures under load.
Single FETs, MOSFETs Part Context
This device belongs to the PowerTrench series of MOSFETs. It utilizes high-performance trench technology to achieve low on-resistance. The SSOP-8 package provides a compact form factor suitable for surface mount applications. The product status is listed as Full Production in the provided datasheet.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same PowerTrench family or equivalent P-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal performance characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
