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FDS6681Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 20A 8SOIC. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDS6681Z
- Description：MOSFET P-CH 30V 20A 8SOIC
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：7540 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 155°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for FDS6681Z
Single FETs, MOSFETs Overview
The FDS6681Z is a P-Channel MOSFET manufactured by onsemi using the PowerTrench process. It features a drain-source voltage of -30 V and a continuous drain current of -20 A. The device offers an on-state resistance of 4.6 mΩ at VGS = -10 V and 6.5 mΩ at VGS = -4.5 V. It supports an extended gate-source voltage range up to ±25 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOIC-8 package.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced PowerTrench technology for minimized on-state resistance
- Supports extended gate-source voltage range for battery applications
- Provides high power and current handling capability
- Includes typical HBM ESD protection level of 8 kV
Single FETs, MOSFETs Applications
- Power management systems
- Load switching circuits
- Notebook computers
- Portable battery packs
Single FETs, MOSFETs Procurement Notes
Verify that the specific part number matches the required datasheet revision, as electrical characteristics may vary between updates. Confirm compliance with RoHS and lead-free requirements if mandated by project specifications. Ensure the ordering suffix corresponds to the desired tape and reel packaging configuration for automated assembly processes.
Single FETs, MOSFETs Selection Notes
Select this component when low on-state resistance is critical for efficiency in portable electronics. Consider the SOIC-8 package constraints regarding thermal dissipation and board space. Evaluate the gate threshold voltage requirements against the driving logic levels to ensure reliable switching performance under varying load conditions.
Single FETs, MOSFETs Part Context
This device belongs to the PowerTrench series from onsemi, designed specifically for minimizing conduction losses. It is categorized as a single-channel enhancement mode MOSFET intended for surface-mount applications. The product line focuses on delivering high performance in compact packages suitable for modern consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists or distributor databases for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics without requiring circuit redesign.
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